silicon multi-epitaxial npn transistor semelab limited reserves the right to change test c onditions, parameter limits and package dimensions without notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourage s customers to verify that datasheets are current before placing o rders. semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8171 issue 1 page 1 of 3 BUX11 ? high current capability. ? hermetic to3 metal package. ? designed for switching and linear applications ? screening options available absolute maximum ratings (t c = 25c unless otherwise stated) v cbo collector ? base voltage 250v v cex collector ? emitter voltage v be = -1.5v 250v v ceo collector ? emitter voltage 200v v ebo emitter ? base voltage 7v i c continuous collector current 20a i cm peak collector current t p = 10ms 25a i b base current 4a p d total power dissipation at t c = 25c 110w derate above 25c 0.63w/c t j junction temperature range -65 to +200c t stg storage temperature range -65 to +200c thermal properties symbols parameters min. typ. max. units r jc thermal resistance, junction to case 1.59 c/w
silicon multi-epitaxial npn transistor BUX11 semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8171 issue 1 page 2 of 3 electrical characteristics (t c = 25c unless otherwise stated) symbols parameters test conditions min. typ max. units i ceo collector cut-off current v ce = 160v i b = 0 1.5 v ce = 250v v be = -1.5v 1.5 i cex collector cut-off current t c = 125c 6 i ebo emitter cut-off current v eb = 5v i c = 0 1.0 ma v (br)ceo (1) collector-emitter breakdown voltage i c = 10ma 200 v (br)ebo emitter-base breakdown voltage i e = 1.0ma 7 i c = 6a i b = 0.6a 0.6 v ce(sat) (1) collector-emitter saturation voltage i c = 12a i b = 1.5a 1.5 v be(sat) (1) base-emitter saturation voltage i c = 12a i b = 1.5a 1.5 v i c = 6a v ce = 2v 20 60 h fe (1) forward-current transfer ratio i c = 12a v ce = 4v 10 dynamic characteristics i c = 1.0a v ce = 15v f t transition frequency f = 10mhz 8 mhz i c = 12a v cc = 150v t on turn-on time i b1 = 1.5a 1.0 t s storage time i c = 12a v cc = 150v 1.8 t f fall time i b1 = -ib2 = 1.5a 0.4 s notes notes notes notes (1) pulse width 300us, 2%
silicon multi-epitaxial npn transistor BUX11 semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8171 issue 1 page 3 of 3 mechanical data dimensions in mm (inches) to3 (to - 204aa) metal package underside view pin 1 - base pin 2 - emitter case - collector 1 2 3 (case) 25.15 (0.99)26.67 (1.05) 10.67 (0.42)11.18 (0.44) 38 . 61 ( 1 . 52 ) 39 . 12 ( 1 . 54 ) 29 . 9 ( 1 . 177 ) 30 . 4 ( 1 . 197 ) 16 . 64 ( 0 . 655 ) 17 . 15 ( 0 . 675 ) 3.84 (0.151)4.09 (0.161) 0 . 97 ( 0 . 060 ) 1 . 10 ( 0 . 043 ) 7.92 (0.312)12.70 (0.50) 22 . 23 ( 0 . 875 ) m a x . 6.35 (0.25)9.15 (0.36) 1.52 (0.06) 3.43 (0.135)
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